Home HOME Kovove Materialy-Metallic Materials 2010 Metallic Materials Vol. 48 (2010), no. 3, pp. 159 - 171

Journal info

Select Journal







Webshop Cart

Your Cart is currently empty.

Info: Your browser does not accept cookies. To put products into your cart and purchase them you need to enable cookies.

Metallic Materials Vol. 48 (2010), no. 3, pp. 159 - 171

Title: Al-Cu alloy formation by aluminium underpotential deposition from AlCl3+NaCl melts on copper substrate
Author: B. S. RADOVIĆ, V. S. CVETKOVIĆ, R. A. EDWARDS, J. N. JOVIĆEVIĆ

Abstract: Aluminium was incorporated into copper electrode surface by underpotential deposition from equimolar AlCl3+NaCl melt at 200o, 250o and 300oC. The process was studied by linear sweep voltammetry and potentiostatic deposition/galvanostatic stripping. The deposits were characterized by electron probe (EMPA), glancing incidence X-ray diffraction (GIXRD) and Auger electron spectroscopy (AES). The electrochemical measurements showed clear evidence of formation of four intermetallic compounds. This was confirmed by the physical analysis, which showed four layers of successive bulk intermetallic compounds.  However, the diffraction patterns of copper samples after two hours of aluminium underpotential deposition at 200o and 250oC showed the diffraction peaks that we could not attribute to any in the literature cited Al/Cu intermetallic compound. The 2θ values (degrees) for unattributable diffraction peaks are reported. The constant-potential regions measured during the low-current stripping corresponded to the coexistence of pairs of the four intermetallic phases. The kinetics of growth of the identified compounds is described.

Keywords: aluminium-copper alloys, underpotential deposition, diffusion, microscopy and microanalysis techniques, Gibbs energy of formation, kinetics
Year: 2010, Volume: 48, Issue: 3 Page From: 159, Page To: 171
doi:10.4149/km_2010_3_159
Price: Call for Pricing






© AEPress s.r.o
Copyright notice: For any permission to reproduce, archive or otherwise use the documents in the ELiS, please contact AEP.